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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm Max. current +10 mA Roughness: < 0
VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm Max. current +10 mA Roughness: < 0
$296.97
Description
Roughness: < 0
Dimension O
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VGF-Ge Wafer(100) . 100 mmdia x 0.175 mm, 2SP, P type ( Ga doped) R:0.1-0.182 ohm.cm Max. current +10 mA Roughness: < 0Ge Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 100(+ _0. 4) mm dia x 175(+ _25) microns Surface Polishing: Both sides polished Surface roughness: < 8 A ( by AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 51 0. 182 ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: (0. 188 1. 13) x10^17 Mobility:
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