Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5 GaAs 57" (30mm)

57" (30mm)

it has a larger band gap and excellent IR transmission

you must use automatic coater as Pic of below- left

Coating area density: 6

AC 110 - 220 V to DC 24V power adapter is included for universal use

Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5 GaAs 57" (30mm)3" dia. InP InGaAs InP layers on InP (100) by MOCVD deposition Substrate: N type S doped InP [100]0. 5, Nc=~5E18 cc Wafer Size: 3" diameter Thickness: 650+ 25um One side polished, backside etched, US Flats EPI Layer 1: 1um thick InP film, n type Si doped, Nc=~5E15 cc EPI Layer 2: 3. 00. 5m thick, lattice matched In0. 53Ga0. 47As film, n type undoped, Nc=1E15 1E16 cc EPI Layer 3(top): 1um thick InP film, n type Si doped, Nc=1E15 1E16 cc