+ 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe"> + 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe"> + 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe"> SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US ITO Coated Plastic Film Please baking at 120oC under – rickynorton.fr

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SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US ITO Coated Plastic Film Please baking at 120oC under

$321.32

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Description

Please baking at 120oC under a vacuum oven before coating

Chemical Composition (wt%)

It is widely used as X-ray and gama-ray detectors

ID:      230 mm

simply align the kit parallel with an MTI multi-channel battery analyzer and have the cells connected to the corresponding channels for cycling life coulombic efficiency

SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US ITO Coated Plastic Film Please baking at 120oC underSpecifications of Substrate Orientation: <0001> + 0. 5 Dimension: 1" x 0. 26 + 0. 03 mm Polished: One side epi polished Surface Roughness: < 5 A by AFM Typical Properties of Single Crystal SiC Formula weight: 40. 10 Unit Cell: Hexagonal Lattice constant: a =3. 07 A c = 10. 53 A Stacking sequence: ABCB (4H) Growth Technique: MOCVD Polishing : Silicon face polished Band Gap: 3. 26eV ( Indirect) Conductivity type: N TTV Bow Warp: <=35 um Micropipe

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