Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP - ALR050505S1 IC Tray Boxes constant resistance discharge

constant resistance discharge

Output 0-260V   /     0-520V   (3/4 Phase+ G) 40-70 Hz The Max Current Per Phase: 125A/62

which is designed for using under magnetic field without blocking magnetic strength

Growth Technique: CZ

Impurity:          Impurity REO<0

Al2O3- Sapphire Wafe, R Plane, 5x5x0.5mm, 1SP - ALR050505S1 IC Tray Boxes constant resistance dischargeFeatures: Sapphire substrate is the popular substrates for III V nitrides, superconductor and magnetic epi film due to less mis matched lattice and stable chemical and physical properties. Wafer size: 5 mm x 5 mm x 0. 5 mm thick Orientation tolerance: + 0. 5 Deg. R plane orientation Polished surface: Substrate surface is EPI polished via a special CMP procedure with Ra < 5 A 1 side polished Package: Each wafer is packed in 1000 class clean room with