LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SP Dry Room 02 g/cm3

02  g/cm3

such as EC400 Dicing

One order has 5 pieces of gasket

Capacity at 1C Divided by Capacity at 0

Gd3Ga5O12 single crystal

LaAlO3, (100) Ori. 0.5" x1.0mm wafer 1 SP Dry Room 02 g/cm3LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 0. 5" dia + 0. 5 mm x 1. 0 thickness + 0. 05 mm Wafer Orientation: (100)