InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Specification Normal 0 7

Specification Normal 0 7

spark-free light

<10-10> +/-0

Edge: Hand Seam (< 0

Solvents and chemicals used for electrospinning may be poisonous

InSb (100) 10x10x 0.45 mm, N type, Te doped, 1 side polished Pyrolytic Graphite Substrate & Foam Specification Normal 0 710x10x0. 45 mm InSb wafer (N type, Te doped) Size: 10x10x0. 45 mm Orientation <100> + 0. 5o with two reference flats Polishing: one side side polishd ( back side etched ) Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5o Doping Te doped Conductivity type N type Carrier Concentration (0. 19 0. 5)E18 @77K Mobility >(3. 58 5. 6)E4 cm2 Vs EPD <1200 1500 cm 2