LaAlO3,(100) Orn. EPI polishing 2" x 0.5mm wafer 1 SP - LAOa50D05C1 --- Qty discounted! Y 0 to 10 VDC

0 to 10 VDC

Surface:           as cut without orietation

Double sides area density: 8

x 1mm Thickness

Conduction Type:                      Undoped (N-) and resistivities: < 0

LaAlO3,(100) Orn. EPI polishing 2" x 0.5mm wafer 1 SP - LAOa50D05C1 --- Qty discounted! Y 0 to 10 VDCLaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for the epitaxial growth of high Tc superconductors, and magnetic and ferroelectric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications. Substrate Specifications: Wafer Size: 2" dia + 0. 5 mm x 0. 5 thickness + 0. 05 mm Wafer Orientation: (100) +