GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 but no Ar gas

but no Ar gas

Customer can consider the following BST8-12

Density:                           5

Thickness 16 +/- 1

It proves inert  for carbon and refractory metals in many severe situations

GaN -Single Crystal Substrate (0001), N type, 10x10.5x0.27 mm , 1SP Orientation 010 but no Ar gasGaN single crystal substrates is made by a hydride vapor phase epitaxy (HVPE) based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. The large growth rate enables the growth of self supporting wafer thicknesses in a convenient time period. Specifications of Substrate Orientation: c axis (0001) + 1. 0 o Nominal Thickness 270+ 30 microns Dimension: 10 mm x 10. 5 mm + 0. 5 mm Resistivity