VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm Vertical at MTI do not endorse

at MTI do not endorse or recommend any product for a given gas

Specific Capacity: 280±30mAh/g

85)E15 @77K

Purity:    99

which is available at any auto store

VGF-Ge Wafer(100) . 50 mmdia x 0.175 mm, 1SP, P type ( Ga doped) R:0.008-0.021 Ohm.cm Vertical at MTI do not endorseGe Wafer Specification Growing Method: VGF Orientation: (100) + 0. 5 Deg. Wafer Size: 50(+ _0. 3) mm dia x 175(+ _15) microns Surface Polishing: One side polished Surface roughness: RMS or Ra:~ 10 A(By AFM) Doping: Ga Doped Conductor type: P type Resistivity: 0. 008 0. 02 Ohm. cm (If you would like to measure the resistivity accurately, please order our Portable 4 Probe Resistivity Testing Instrument.) Carrier Concentration: N A Mobility: N A EPD: