HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - Current

HB00700 - SEMI HB7 - Test Method for Measurement of Waviness of Crystalline Sapphire Wafers by Using Optical Probes Revision:SEMI HB7-0615 - CurrentThis Standard was technically approved by the HB LED Global Technical Committee. This edition was approved for publication by the global Audits and Reviews Subcommittee on May 19, 2015. Available at www. semiviews. org and www. semi. org in June 2015. Crystalline sapphire wafers (CSW) are used as substrates for manufacturing compound semiconductor devices, in particular high brightness light emitting diodes (HB LED). In SEMI HB1 a multitude of

This Document is a guide to a test method to determine gas change/purge efficiency of gas delivery system

The pellicle exclusion volumes of this Specification accommodate pellicles which extend the full length of the reticle and up to a maximum pellicle width of 124 mm

org in November 2004

SEMI D9 — Terminology for FPD Substrates

The purpose of this Standard is to provide recommendations for developing and delivering equipment training so that it is performance-based

Detailed information on the method is found in ASTM G48

シリコンエピタキシャルウェーハの中には，エピタキシャル層の下に埋め込み層が形成されているものがある。 本仕様はそのような埋め込み層付きのエピタキシャルウェーハの特性について規定するものである。

Similar requirements and options covering load ports for wafers are covered in SEMI E15 (for 200 mm wafers and smaller) and in SEMI E15

この文書の目的は，半導体製造環境の中で静電気電荷および電界に起因した生産性への悪影響を最小にすることである｡本文書は，半導体工場全体の静電気的な両立性を確立するためのガイドである｡半導体製造に使われる装置の静電気的な両立性は，SEMI E78に述べている。

SEMI M56-1018 (technical revision)

facility distribution

This edition was approved for publication by the global Audits and Reviews Subcommittee on December 16