HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded Most device applications require that

Most device applications require that mobile ionic charge be minimized

Slices can be any crystallographic orientation and should be polished or lapped and etched on both surfaces

1-1102 (Reapproved 0309) - オブジェクト基盤装置モデルのためのSECS-II プロトコル用暫定仕様

このスタンダードは以下を期待される：

This Guide is intended for use in both establishing new Specifications within SEMI as well as verification of performance to SEMI Specifications

HB01100 - SEMI HB11 - Specification for Sapphire Single Crystal Ingot Intended for Use for Manufacturing HB-LED Wafers Revision:SEMI HB11-0819 - Superseded Most device applications require thatThe sapphire single crystal ingot is used as a substrate material for HB LED applications. To permit common processing equipment to be used in multiple device fabrication lines, it is essential for the sapphire single crystal ingot specifications to be standardized. This Specification provides the characteristics of sapphire single crystal ingot, consisting of the physical specification, orientation, shape, and defect standard. This Specification is