MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 SEMI F61-0301 (first published)

SEMI F61-0301 (first published)

and process equipment evaluation purposes

本スタンダードは，global Gases Technical Committeeで技術的に承認されている。現版は2011年9月12日，global Audits and Reviews Subcommitteeにて発行が承認された。2011年10月にwww

can be used to facilitate inclusion of such additional physical properties and suitable test methods as may be required in the Specification

SEMI G63-95 (first published)

MF152800 - SEMI MF1528 - Test Method for Measuring Boron Contamination in Heavily Doped N-Type Silicon Substrates by Secondary Ion Mass Spectrometry StdPbc-1123 SEMI F61-0301 (first published)1 Purpose 1. 1 Frequently it is essential to control the boron level in heavily doped n type substrates used to make epitaxial wafers because the boron contamination can result in autodoping at the epitaxial silicon substrate interface. 1. 2 SIMS can measure the boron contamination in heavily doped n type substrates. 1. 3 This Test Method can be used for process control, research and development, and materials acceptance purposes. 2 Scope 2. 1 This